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Copper(I) iodide, CuI, is the leading p-type non-toxic and earth-abundant semiconducting material for transparent electronics and thermoelectric generators. Defects play a crucial role in determining the carrier concentration, scattering process, and therefore thermoelectric performance of a material. A result of defect engineering, the power factor of thin film CuI was increased from 332±32 μWm-1K-2 to 578±58 μWm-1K-2 after implantation with noble gas ions (Ne, Ar, Xe). The increased power factor is due to a decoupling of the Seebeck coefficient and electrical conductivity identified through a changing scattering mechanism. Ion implantation causes the abundant production of Frenkel pairs, which were found to suppress compensating donors in CuI, and which scenario was also supported by density functional theory calculations. The compensating donor suppression led to a significantly improved Hall carrier concentration, increasing from 6.5×1019±0.1×1019 cm-3 to 11.5×1019±0.4×1019 cm-3. This work provides an important step forward in the development of CuI as a transparent conducting material for electronics and thermoelectric generators by introducing beneficial point defects with ion implantation.

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ヨウ化銅（I）CuIは、透明電子機器や熱電発電機用のp型非毒性かつ地球上に豊富に存在する半導体材料です。欠陥は、キャリア濃度、散乱プロセス、そして材料の熱電性能を決定する上で重要な役割を果たします。欠陥エンジニアリングの結果、電力係数は

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Copper iodide (I) CuI is a p-type non-toxic and earth-abundant semiconductor material for transparent electronics and thermoelectric generators. Defects play a key role in determining the carrier concentration, scattering processes, and thus the thermoelectric performance of the material. As a result of defect engineering, the power factor is

INTO JAPANESE

ヨウ化銅（I）CuIは、透明電子機器や熱電発電機用のp型無毒で地球上に豊富に存在する半導体材料です。欠陥は、キャリア濃度、散乱プロセス、ひいては材料の熱電性能を決定する上で重要な役割を果たします。欠陥エンジニアリングの結果、パワーファクターは

BACK INTO ENGLISH

Copper iodide(I) CuI is a p-type non-toxic and earth-abundant semiconductor material for transparent electronics and thermoelectric generators. Defects play a key role in determining the carrier concentration, scattering processes and thus the thermoelectric performance of the material. As a result of defect engineering, the power factor

INTO JAPANESE

ヨウ化銅(I) CuIは、透明電子機器や熱電発電機用のp型無毒で地球上に豊富に存在する半導体材料です。欠陥は、キャリア濃度、散乱プロセス、ひいては材料の熱電性能を決定する上で重要な役割を果たします。欠陥エンジニアリングの結果、力率は

BACK INTO ENGLISH

Copper(I) iodide, CuI, is a p-type non-toxic and earth-abundant semiconductor material for transparent electronics and thermoelectric generators. Defects play a key role in determining the carrier concentration, scattering processes and thus the thermoelectric performance of the material. As a result of defect engineering, the power factor is

INTO JAPANESE

ヨウ化銅（I）CuIは、透明電子機器や熱電発電機用のp型無毒で地球上に豊富に存在する半導体材料です。欠陥は、キャリア濃度、散乱プロセス、ひいては材料の熱電性能を決定する上で重要な役割を果たします。欠陥エンジニアリングの結果、パワーファクターは

BACK INTO ENGLISH

Copper iodide(I) CuI is a p-type non-toxic and earth-abundant semiconductor material for transparent electronics and thermoelectric generators. Defects play a key role in determining the carrier concentration, scattering processes and thus the thermoelectric performance of the material. As a result of defect engineering, the power factor

INTO JAPANESE

ヨウ化銅(I) CuIは、透明電子機器や熱電発電機用のp型無毒で地球上に豊富に存在する半導体材料です。欠陥は、キャリア濃度、散乱プロセス、ひいては材料の熱電性能を決定する上で重要な役割を果たします。欠陥エンジニアリングの結果、力率は

BACK INTO ENGLISH

Copper(I) iodide, CuI, is a p-type non-toxic and earth-abundant semiconductor material for transparent electronics and thermoelectric generators. Defects play a key role in determining the carrier concentration, scattering processes and thus the thermoelectric performance of the material. As a result of defect engineering, the power factor is